Chemical Vapor Deposition (CVD) is a process in which the gas precursors, activated by heat, light or plasma in a chamber, react on or near the vicinity of a heated substrate surface and deposit in a solid phase onto the surface.
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a specific type of CVD which all CVD processes are influenced by plasma, in a way that it enables them to proceed far more efficiently at relatively lower temperatures.
Chemical Vapor Deposition (CVD) is one of the vacuum-based techniques which can produce coatings nearly from all materials including metallic and non-metallic compounds, carbides, nitrides, oxides, intermetallics and many other materials. In summary, CVD is formation and deposition of a solid layer on a substrate which results from chemical reaction(s) of gaseous reactants in a reaction chamber.
Pulsed-Laser Deposition (PLD) is a type of physical vapor deposition which uses thermal stimulation for evaporation, transfer, and deposition of Target atoms onto a substrate. Like all similar deposition methods, the main sections of this apparatus are Target (desired coating material) and a substrate, which are placed in a chamber connected to the vacuum pumps; during deposition process, a laser beam is employed to thermally stimulate the Target.
Sputtering is a kind of non-thermal vaporization which is extensively being used for producing conductive and non-conductive thin film coating on various substrates.
Physical Vapor Deposition (PVD) is the name of large family of vacuum-based layer deposition methods which today is being extensively used for production of thin films and coatings.
Sputtering is one of the vacuum-based techniques used to deposit thin film coatings. This technique involves three basic steps including; the momentum transfer from high energetic ions of ionized gas to a cathode (Target), the ejection of atoms from the Target, and then the deposition onto a substrate (anode).
Plasma Enhanced Chemical Vapour Deposition (PECVD) is a process in which thin films of different materials are deposited on a substrate surface at low temperatures. Since plasma can reduce the activation energy of a reaction, the deposition temperature can be significantly decreased.