TEHRAN (INIC)- A new dual-gate transistor with a higher performance in comparison with the present transistors was presented to the electronic industrialists by the researchers at Sabzevar Tarbiat Moalem University in Khorrasan Razavi province in northeastern Iran.

“In this research, a new structure has been suggested to the specialists in electronics in order to manufacture a special transistor," Mohammad Kazzem Anvarifard, MSc in electronics, told the news service of Iran Nanotechnology Initiative Council.

"In these transistors, short-channel effects increase by decreasing the channel length, and the transistor performance decreases. The effects of short-channel are less even in a gate length of 50 nm. Therefore, if the channel length is reduced to nano scale, the performance of the transistor improves in comparison with a single-gate one,” he added.

Anvarifard used a method in this research based on dividing the gate into two parts and using a voltage between them. He first simulated the transistor by using some boundary conditions and classic equations for the semi-conductor. Then, he evaluated various parameters such as electric field, etc.

All results obtained from the experiment are indicative of the better performance of the suggested transistor than single-gate transistors.

“In the suggested transistor, the performance can be analyzed easily by setting various potential differences. Other methods such as work function difference had been used in the previous researchers," he said, adding, "In fact work function is a limitation because we cannot create any desirable metal or work function. The optimum potential difference in this research is 0.75 V, and it can be created by a normal diode. As a result, one of the important advantages of this research is its practicality.”

The research has been published in detail in Japanese Journal of Applied Physics, vol. 48.