TEHRAN (INIC)- Iranian researchers at Tarbiat Modares University proposed a method for optimizing the graphene used in electronics industry by empirical analyses.

"The aim of this research was to examine spin mode in doped and undoped graphene. Parameters effective on this mode for controlling and optimizing it in the presence of magnetic field and dope were investigated," Morad Ebrahimkhas, one of the research colleagues, said to the news service of INIC.

He studied the interaction between electron and spin mode in the first step. To this end, he calculated the effects of this interaction on the decay rate and pseudoparticles half-life.

He then analyzed and predicted spin mode in doped graphene by which he observed the effects of impurities such as magnetic one in doped graphene in the presence of external field.

"This research could be generally applied in the technology of electronic nanostructures production but yet more steps should be taken to reach the optimization step", Ebrahimkhas emphasized.

The details of the present research, which has been done in cooperation with Seyed Akbar Jafari, are available at PHYSICAL REVIEW B, volume 79, number 20, May 2009.